jun . 2018 version 1 . 3 magnachip semicondu ctor ltd . 1 md p 5 n 5 0 f / mdf 5 n 50f n - channel mosfet 5 00 v absolute maximum ratings (ta = 25 o c) characteristics symbol mdp 5n50f mdf 5n50f unit drain - source voltage v dss 5 00 v gate - source voltage v gss 30 v continuous drain current t c =25 o c i d 4.5 4.5* a t c = 10 0 o c 2.8 2.8* a pulsed drain current (1) i dm 18 18 * a power dissipation t c =25 o c p d 9 3 27 w w/ o c derate above 25 o c 0.74 0. 2 2 repetitive avalanche energy (1) e ar 93 mj peak diode recovery dv/dt (3) d v/dt 4.5 v/ns single pulse avalanche energy (4) e as 230 mj junction and storage temperature ra nge t j , t stg - 55~150 o c * id limited by maximum junction temperature thermal characteristics characteristics symbol mdp 5n50f mdf 5n50f unit thermal resistance, junction - to - ambient (1) r ja 62.5 62.5 o c/w thermal resistance, junction - to - case (1) r jc 1.35 4 .6 md p 5 n 50 f / mdf 5 n 5 0 f n - channel mosfet 500 v, 4.5 a, 1.5 8 ? general description the md p 5 n50 f /MDF5N50F use advanced magnachip features ? ds = 500 v ? d = 4.5 a @v gs = 10v ? ds(on) gs = 10v applications ? ? ? to - 220f mdf series to - 220 mdp series d g s
jun . 2018 version 1 . 3 magnachip semicondu ctor ltd . 2 md p 5 n 5 0 f / mdf 5 n 50f n - channel mosfet 5 00 v ordering information p art number temp. range package packing rohs status mdp5n50f th - 55~150 o c to - 220 tube halogen free MDF5N50F th - 55~150 o c to - 220 f tube halogen free e lectrical characteristics (ta =25 o c) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 500 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250a 2.5 - 4 .5 drain cut - off current i dss v ds = 5 00v, v gs = 0v - - 1 0 a gate leakage current i gss v gs = 2 0v, v ds = 0v - - 100 n a drain - source on resistance r ds(on) v gs = 10v, i d = 2.5 a 1.25 1.5 8 forward transconductance g fs v ds = 30v, i d = 2.5 a - 3.3 - s dynamic characteristics total gate charge q g v ds = 500 v, i d = 5.0 a, v gs = 10v (3) - 12.1 15.73 nc gate - source charge q gs - 3.6 - gate - drain charge q gd - 4.3 - input capacitance c iss v ds = 25v, v gs = 0v, f = 1.0mhz - 500 650 pf reverse transfer capacitance c rss - 1.5 2.25 output capacitance c oss - 65 84.5 turn - on delay time t d(on) v gs = 10v, v ds = 250 v, i d = 5.0 a, r g = 25 (3) - 23 48.3 ns rise time t r - 30 60 turn - off delay time t d(off) - 37 77.7 fall time t f - 29 60.9 drain - source body diode characteristics maximum continuous drain to source diode forward current i s - 4.5 - a source - drain diode fo rward voltage v sd i s = 5.0 a, v gs = 0v - 1.4 v body diode reverse recovery time t rr i f = 5.0 a, dl/dt = 100a/s (3) - 80 ns body diode reverse recovery charge q rr - 1.6 c note : 1. p ulse width is based on r j c & r j a and the maximum allowe d junction temperature of 150c. 2. pulse test: pulse width 300us, duty cycle 2%, pulse width limited by junction temperature tj(max)=150 c. 3. i s d 4.5 a, di/dt 200a/us, v dd =50v, r g =25 , starting tj=25 c 4. l= 20.5 mh, i as = 4.5 a, v dd =50v, , r g =25 , startin g tj=25 c
jun . 2018 version 1 . 3 magnachip semicondu ctor ltd . 3 md p 5 n 5 0 f / mdf 5 n 50f n - channel mosfet 5 00 v fig. 5 trans fer characteristics fig.1 on - region characteristics fig. 2 on - resistance variation with drain current and gate voltage fig. 3 on - resistance variation with temperature fig. 4 breakdown voltage variation vs. temperature fig. 6 body diode forward voltage v ariation with source current and temperature 0 2 4 6 8 10 12 1.0 1.5 2.0 2.5 v gs =10.0v v gs =20v r ds(on) [? ] i d ,drain current [a] 5 10 15 20 0 1 2 3 4 5 6 7 8 9 10 11 notes 1. 250 ? 2. t c =25 v gs =5.5v =6.0v =6.5v =7.0v =8.0v =10.0v =15.0v i d ,drain current [a] v ds ,drain-source voltage [v] -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 ? bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 2.25a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 2 3 4 5 6 7 8 9 10 1 10 25 * notes ; 1. v ds =30v 150 i d [a] v gs [v] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 notes : 1. v gs = 0 v 2. 250 ? pulse test i dr reverse drain current [a] v sd , source-drain voltage [v]
jun . 2018 version 1 . 3 magnachip semicondu ctor ltd . 4 md p 5 n 5 0 f / mdf 5 n 50f n - channel mosfet 5 00 v fig. 7 gate charge characteristics fig. 8 capacitance characteristics fig. 9 maximum safe operating area mdp 5n50f (to - 220) fig. 10 maximum drain current v s. case temperature fig. 11 transient thermal re sponse curve mdp 5n50f (to - 220) fig .12 single pulse maximum power dissipation C mdp 5n50f (to - 220) 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 100 ? s 100 ms dc 10 ms 1 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c r jc =1.35 /w single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , rectangular pulse duration [sec] 1e-5 1e-4 1e-3 0.01 0.1 1 10 0 2000 4000 6000 8000 10000 single pulse r thjc = 1.35 t c = 25 power (w) pulse width (s) 1 10 0 200 400 600 800 1000 1200 1400 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 2 4 6 8 10 12 14 0 2 4 6 8 10 400v 250v 100v note : i d = 4.5a v gs , gate-source voltage [v] q g , total gate charge [nc] 25 50 75 100 125 150 0 2 4 6 i d , drain current [a] t c , case temperature [ ]
jun . 2018 version 1 . 3 magnachip semicondu ctor ltd . 5 md p 5 n 5 0 f / mdf 5 n 50f n - channel mosfet 5 00 v fig. 13 maximum safe operating area mdf 5n50f (to - 220f) fig. 11 transient thermal response curve mdf 5n50f (to - 220f) fig .12 single pulse maximum power dissipation - mdf 5n50f (to - 220f) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c r jc =4.6 /w single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), normalized thermal response t 1 , rectangular pulse duration [sec] 1e-5 1e-4 1e-3 0.01 0.1 1 10 0 2000 4000 6000 8000 10000 single pulse r thjc = 4.6 t c = 25 power (w) pulse width (s) 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 1 s 10 ? s 100 ? s 100 ms dc 10 ms 1 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v]
jun . 2018 version 1 . 3 magnachip semicondu ctor ltd . 6 md p 5 n 5 0 f / mdf 5 n 50f n - channel mosfet 5 00 v ? physical dimension 3 leads , to - 220 dimensions are in millimeters unless otherwise specified
jun . 2018 version 1 . 3 magnachip semicondu ctor ltd . 7 md p 5 n 5 0 f / mdf 5 n 50f n - channel mosfet 5 00 v ? physical dimension 3 leads , to - 220f dimensions are in millimeters unless otherwise specified symbol min nom max a 4.50 4.93 b 0.63 0.91 b1 1.15 1.47 c 0.33 0.63 d 15.47 16.13 e 9.60 10.71 e 2.54 f 2.34 2.84 g 6.48 6.90 l 12.24 13.72 l1 2.79 3.67 q 2.52 2.96 q1 3.10 3.50 r 3.00 3.55
jun . 2018 version 1 . 3 magnachip semicondu ctor ltd . 8 md p 5 n 5 0 f / mdf 5 n 50f n - channel mosfet 5 00 v di sclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry w ithout notice at any time. magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor ltd.
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